| PART |
Description |
Maker |
| MT58L32L32P MT58L32L36P MT58L64L18P |
32K x 32, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，单循环取消选择，同步脉冲静态存储器)
32K x 36, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，单循环取消选择，同步脉冲静态存储器)
64K x 18, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，单循环取消选择，同步脉冲静态存储器) 64K的18.3V的I / O的流水线，SCD的SyncBurst的SRAM兆，3.3V的输输出，流水线式，单循环取消选择，同步脉冲静态存储器
|
Micron Technology, Inc.
|
| MT58L64L32FT-6.8 MT58L64L36FT-6.8 MT58L64V32FT-6.8 |
2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM 2MB的：128K的1864K的x 32/36流通过SYNCBURST的SRAM
2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM 2MB的：128K的184K的x 32/36流通过SYNCBURST的SRAM
|
Micron Technology, Inc.
|
| MT58L256L36P MT58L256L32P MT58L256V32P MT58L256V36 |
8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM
|
Micron Technology
|
| DS1270W |
3.3V 16Mb Nonvolatile SRAM
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Dallas Semiconducotr
|
| R1LV1616RSD-8SW R1LV1616R R1LV1616RBG-7SI R1LV1616 |
16Mb superSRAM (1M wordx16bit)
Memory>Low Power SRAM
|
http://
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| IC61SF12836 IC61SF12832 IC61SF12832-7.5B IC61SF128 |
SYNCHRONOUS STATIC RAM, Flow Through
128K x 32 Flow Through SyncBurst SRAM
|
Integrated Circuit Solu...
ICSI[Integrated Circuit Solution Inc]
|
| IC61SF25636T IC61SF25636D IC61SF25632T IC61SF25632 |
SYNCHRONOUS STATIC RAM, Flow Through
From old datasheet system
8Mb SyncBurst Flow through SRAM
|
ICSI[Integrated Circuit Solution Inc]
|
| DS3070W-100 |
3.3V Single-Piece 16Mb Nonvolatile SRAM with Clock 3.3V的单16Mb的非易失SRAM，带有时
|
Maxim Integrated Products, Inc.
|
| K6F1616U6CNBSP K6F1616U6C |
16Mb(1M x 16 bit) Low Power SRAM
|
Samsung semiconductor
Samsung Electronic
|
| EM481M1622VTC-6F EM481M1622VTC-6FE EM481M1622VTC-7 |
16Mb (512K隆驴2Bank隆驴16) Synchronous DRAM
16Mb (512K×2Bank×16) Synchronous DRAM
|
Eorex Corporation
|
| ID245K01 |
16MB Flash Memory Card
|
SHARP[Sharp Electrionic Components]
|
